1-D Drift-Diffusion Simulation of Two-Valley Semiconductors and Devices

Abstract

A two-valley formulation of 1-D drift-diffusion transport is presented that takes the coupling between the valleys into account via a new approximation for the nonlocal electric field. The proposed formulation is suitable for the simulation of III–V heterojunction bipolar transistors as opposed to formulations that employ the single electron gas approximation with a modified velocity-field model, which also causes convergence problems. Based on Boltzmann transport equation simulations, model parameters of the proposed two-valley formulation are given for GaAs, InP, InAs, and GaSb at room temperature. Applications of the new formulation are also demonstrated.

Publication
1-D Drift-Diffusion Simulation of Two-Valley Semiconductors and Devices
Markus Müller
Markus Müller
Research Associate and PhD candidate

My research interests include compact modeling, TCAD and circuit simulation of advanced HBTs.