Advances in foundry SiGe HBT BiCMOS processes through modeling and device scaling for ultra-high speed applications
Abstract
In this paper the technology advancements of a state-of-the-art SiGe HBT technology that have been achieved in a research project are presented.
Type
Publication
Advances in foundry SiGe HBT BiCMOS processes through modeling and device scaling for ultra-high speed applications
Markus Müller
Research Associate and PhD candidate
My research interests include compact modeling, TCAD and circuit simulation of advanced HBTs.