Advances in foundry SiGe HBT BiCMOS processes through modeling and device scaling for ultra-high speed applications

Abstract

In this paper the technology advancements of a state-of-the-art SiGe HBT technology that have been achieved in a research project are presented.

Publication
Advances in foundry SiGe HBT BiCMOS processes through modeling and device scaling for ultra-high speed applications
Markus Müller
Markus Müller
Research Associate and PhD candidate

My research interests include compact modeling, TCAD and circuit simulation of advanced HBTs.