Augmented Drift-Diffusion Transport for the Simulation of Advanced SiGe HBTs
Abstract
In this paper a newly developed augmented Drift-Diffusion transport formulation for the simulation of SiGe HBTs with non-negligible velocity overshoot are discussed.
Type
Publication
Augmented Drift-Diffusion Transport for the Simulation of Advanced SiGe HBTs
Markus Müller
Research Associate and PhD candidate
My research interests include compact modeling, TCAD and circuit simulation of advanced HBTs.