Augmented Drift-Diffusion Transport for the Simulation of Advanced SiGe HBTs

Abstract

In this paper a newly developed augmented Drift-Diffusion transport formulation for the simulation of SiGe HBTs with non-negligible velocity overshoot are discussed.

Publication
Augmented Drift-Diffusion Transport for the Simulation of Advanced SiGe HBTs
Markus Müller
Markus Müller
Research Associate and PhD candidate

My research interests include compact modeling, TCAD and circuit simulation of advanced HBTs.